Rate My Professor Jose Ortiz Gonzalez

Dr. Ortiz Gonzalez specializes in power electronics, wide bandgap power semiconductors, and reliability and health monitoring. He has authored or co-authored more than 120 journal and conference papers, with 26 as first author, published in outlets such as IEEE Transactions on Power Electronics, IEEE Transactions on Industrial Electronics, and IEEE Transactions on Industry Applications. Notable publications include "Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs" (IEEE Transactions on Industry Applications, 2021), "Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs" (IEEE Transactions on Power Electronics, 2021), "Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs" (IEEE Transactions on Industrial Electronics, 2020), and "A Novel Non-Intrusive Technique for BTI Characterization in SiC MOSFETs" (IEEE Transactions on Power Electronics, 2019). He collaborates with industry partners like AVL Powertrain Ltd, Bourns Ltd, and Dynex Semiconductors UK Ltd, and served as Researcher Co-Investigator on a £1.2M EPSRC project (EP/R004366/1). As Associate Editor for Elsevier Microelectronics Reliability, he reviews for IEEE and IET journals and holds roles including Secretary of IEEE PELS Technical Committee TC-6 and Vice-Chair of IEEE IAS Power Electronic Devices and Components Committee. He has chaired conference sessions and organized tutorials at events like EPE.